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| NTE3044 Optoisolator NPN Darlington Transistor Output Description: The NTE3044 consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector in an 6-Lead DIP type package. This device is designed for use in applications requiring high sensitivity at a low input current. Features: D High Sensitivity to Low Input Drive Current D High Collector-Emitter Breakdown Voltage D No Base Conncetion for Improved Noise Immunity Applications: D Appliances, Measuring Instruments D I/O Interfaces for Computers D Programmable Controllers D Portable Electronics D Interfacing and Coupling Systems of Different Potentials and Impedances D Solid State Relays Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Input LED Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA LED Power Dissipation (with Negligible Power in Output Detector, TA = +25C), PD . . . . . 120mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/C Output Detector Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Detector Power Dissipation (with Negligible Power in Output Detector, TA = +25C), PD . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . . 7500V Total Device Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/C Ambient Operating Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 1/16" from Case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +260C Note 1. Isolation surge voltage is an internal dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Input LED Reverse Leakage Current Forward Voltage Capacitance Photodarlington (IF = 0) Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Coupled Collector Output Current Isolation Surge Voltage Isolation Resistance Isolation Capacitance Switching Turn-On Time Turn-Off Time Rise Time Fall Time ton toff tr tf VCC = 10V, RL = 100, IF = 5mA - - - - 3.5 95 1 2 - - - - s s s s IC VISO RISO CISO VCE = 1.5V, IF = 10mA 60Hz Peak AC, 5sec, Note 2, Note 3 V = 500V, Note 2 V = 0, f = 1MHz, Note 2 30 7500 - - - - 1011 0.2 - - - - mA V pF ICEO VCE = 60V - 80 5 - - - 1 - - A V V V(BR)CEO IC = 1mA V(BR)ECO IE = 100A IR VF C VR = 3V IF = 10mA VR = 0, f = 1MHz - - - 0.05 1.15 18 10 2.0 - A V pF Symbol Test Conditions Min Typ Max Unit Note 2. For this test, LED Pin1 and Pin2 are common and Phototransistor Pin4 and Pin5 are common. Note 3. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. Pin Connection Diagram Anode 1 2 3 6 N.C. 5 Collector 4 Emitter Cathode N.C. 6 5 4 .260 (6.6) Max 1 2 3 .070 (1.78) Max .350 (8.89) Max .300 (7.62) .200 (5.08) Max .350 (8.89) Max .085 (2.16) Max .100 (2.54) |
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